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HyperX KHX1800C8D3/1G memory module 1 GB 1 x 1 GB DDR3

HyperX KHX1800C8D3/1G memory module 1 GB 1 x 1 GB DDR3

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HyperX 4GB DDR3 240-Pin DIMM Kit memory module 2 x 2 GB

HyperX 4GB DDR3 240-Pin DIMM Kit memory module 2 x 2 GB

HyperX 4GB DDR3 240-pin DIMM Kit memory module 2 x 2 GB

HyperX 4GB DDR3 240-pin DIMM Kit, 4 GB, 2 x 2 GB, DDR3, 2000 MHz, 240-pin DIMM

Documentation:

SKU: KHX2000C9D3T1K2/4GX Category: Brand:

The product is designed for high-performance computing environments where reliability and efficiency are paramount. It features an advanced DDR3 memory architecture with a peak data transfer rate of up to 8 gigabytes per second at its maximum frequency of 2000 megahertz. This kit includes two separate 2-gigabyte modules that can be individually configured in various ways depending on system requirements.

Each module operates under a standard 240-pin DIMM interface, ensuring compatibility across different motherboard models. With a CAS latency of nine, it provides optimal responsiveness while maintaining low power consumption levels typical of modern DRAM technologies. Additionally, this HyperX memory offers excellent stability through precise control over timing parameters such as refresh rates which contribute significantly towards enhancing overall performance without compromising durability.

Furthermore, these components utilize gold-plated contacts for enhanced conductivity reducing potential interference issues commonly associated with lower quality materials used elsewhere within similar products available today.

Notable features

  • Model: HyperX 4GB DDR3 240-pin DIMM Kit memory module 2 x 2 GB
  • sku: KHX2000C9D3T1K2/4GX
  • Internal memory: 4 GB
  • Memory layout (modules x size): 2 x 2 GB
  • Internal memory type: DDR3
  • Memory form factor: 240-pin DIMM
  • CAS latency: 9
  • Memory clock speed: 2000 MHz

Additional information

Internal memory

4 GB

Memory layout (modules x size)

2 x 2 GB

Internal memory type

DDR3

Memory form factor

240-pin DIMM

CAS latency

9

Memory clock speed

2000 MHz

Memory voltage

1.65 V

Row cycle time

49.5 ns

Refresh row cycle time

110 ns

Row active time

36 ns

Lead plating

Gold

Operating temperature (T-T)

0 – 85 °C

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